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| Bulletin PD-20998 rev. C 08/01 65PQ015 SCHOTTKY RECTIFIER 65 Amps Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 65Apk, TJ=125C range Description/Features The 65PQ015 Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. TO-247 package 125C TJ operation (VR < 5V) Single diode configuration Optimized for OR-ing applications Ultra low forward voltage drop Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 65PQ015 Units 65 15 1500 0,46 - 55 to 125 A V A V C Case Styles 65PQ015 Base Cathode 2 1 3 Anode Anode TO-247AC 1 65PQ015 Bulletin PD-20998 rev. C 08/01 Voltage Ratings Part number VR VR Max. DC Reverse Voltage (V) Max. DC Reverse Voltage (V) @ TJ = 100 C @ TJ = 125 C 65PQ015 15 5 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current 60PQ015 Units 65 1500 400 9 2 A A mJ A Conditions 50% duty cycle @ TC = 83C, rectangular wave form 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 C, IAS = 2 Amps, L = 4.5 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Forward Voltage Drop (1) 65PQ015 Units 0,50 0,71 0,46 0,76 18 (1) 870 1.2 0,137 4,9 4300 8 10000 V V V V mA mA A mV m pF nH V/ s @ 65A @ 130A @ 65A @ 130A Conditions TJ = 25 C TJ = 125 C VR = rated VR VR = 5V IRM Reverse Leakage Current TJ = 25 C TJ = 100 C TJ = 125 C TJ = TJ max. VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance VR = 5VDC, (test signal range 100Khz to 1Mhz) 25C Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change (Rated VR) Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range (1) Pulse Width < 300s, Duty Cycle <2% 65PQ015 Units -55 to 125 -55 to 150 0.8 0.3 6 (0.21) Min. Max. 6 (5) 12 (10) C C C/W C/W g (oz.) Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight MountingTorque Case Style DC operation Mounting surface , smooth and greased Kg-cm Non-lubricated threads (Ibf-in) TO-247AC(TO-3P) JEDEC 2 www.irf.com 65PQ015 Bulletin PD-20998 rev. C 08/01 1000 10 0 0 T J = 100 C Reve rse C urren t - I R (m A ) 75 C 100 50 C 10 25 C In st a nt an e ous Fo rw a rd C urre nt - I F (A) 100 1 0 2 4 6 8 10 12 14 16 Reverse V olta ge - VR (V ) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage T = 12 5 C J 1 0 00 0 (p F) T = 10 0 C J 10 T = 25 C J J unction C ap a citan ce - C T J = 25 C T 1 0 0 .5 1 1 .5 Forw a rd V olta g e D ro p - V (V ) FM 10 0 0 2 2 4 6 8 10 12 14 16 Reverse V olta ge - VR (V ) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 Therm al Im pedance Z thJC ( C /W ) D D D D D 0 .1 = = = = = 0 .75 0 .50 0 .33 0 .25 0 .2 0 Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage PD M t1 Notes: Sin g le P u lse (Th erm a l R esista nc e) 0.0 1 0 .0 000 1 t2 1. D uty factor D = t 1/ t 2 2. Peak TJ = PD M x Z thJC+ T C 0 .1 1 10 1 00 0.00 0 1 0.00 1 0 .01 t 1 , R ec ta n g ula r Pu lse Du ra tio n (Seco n d s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 65PQ015 Bulletin PD-20998 rev. C 08/01 150 A llo wab le C ase Tem p eratur e - ( C ) A ve ra ge P ow er Loss - (W atts) 80 D D D D D = = = = = 0.20 0.25 0.33 0.50 0.75 120 DC 90 60 40 RM S Lim it DC 60 Sq ua re w ave (D = 0.50) 5 V a pp lied 30 se e no te (2) 20 0 0 20 40 60 80 10 0 Averag e Forw a rd C urrent - I F(AV ) (A ) 0 0 20 40 60 80 1 00 Averag e Forw a rd C urrent - I F (AV ) (A ) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current 10000 N on -Repe titive Surge C urre nt - I FSM (A ) Fig. 6 - Forward Power Loss Characteristics At An y Rated Load C ond ition An d W ith Rated V RRM Ap plied Follow in g Surg e 1000 100 10 100 1000 10000 Sq uare W ave Pulse D uration - t p (m icrosec) Fig. 7 - Maximum Non-Repetitive Surge Current L H IG H-SPE ED SW ITC H FR EE-W H E EL D IO D E 40H FL40 S02 V d = 25 V olt D UT IRFP460 Rg = 25 ohm + C URRE NT M O N ITO R Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 5 V 4 www.irf.com 65PQ015 Bulletin PD-20998 rev. C 08/01 Outline Table 3. 65 (0 .14 4) 3. 55 (0 .13 9) 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 15 .90 (0 .626 ) 15 .30 (0 .602 ) DIA. 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 3 (2 PLCS.) Base Cathode 2 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1 3 Anode Anode 1. 40 (0 .05 6) 2. 40 (0 .09 5) MAX. 0.80 ( 0.032) 0. 40 (0 .21 3) MAX. 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 ) Conform to JEDEC outline TO-247AC (TO-3P) Dimensions in millimeters and (inches) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 08/01 www.irf.com 5 |
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